Semiconductor manufacturer Nexperia plans to invest $200 million to develop the next generation of wide bandgap semiconductors (WBG) such as silicon carbide (SiC) and gallium nitride (GaN), and to establish production infrastructure at the Hamburg site.
At the same time, wafer fab capacity for silicon (Si) diodes and transistors will be increased. The investments were jointly announced with Hamburg’s Minister for Economic Affairs, Dr Melanie Leonhard, on the occasion of the 100-year anniversary of the production site.
To meet the growing long-term demand for efficient power semiconductors, all three technologies (SiC, GaN, and Si) will be developed and produced in Germany starting in June 2024. This means Nexperia is supporting key technologies in the fields of electrification and digitalization. [Read more…] about Nexperia to invest $200 million in Hamburg chip-making facility